Dependence of Modulation Responce on Laser Parameters in Hybrid Lasers

Çodur, Muhammet Mustafa
Çakmak, Bülent


Dependence of energy levels and optical transitions on layer thicknesses in InSe/GaSe superlattices
Erkoc, S; Katırcıoğlu, Şenay (Elsevier BV, 1998-12-01)
We have investigated the dependence of energy levels and optical transition matrix elements in InSe/GaSe superlattices on well and/or barrier widths. Self-consistent-field calculations have been performed within the effective-mass theory approximation.
Katırcıoğlu, Şenay (1994-05-10)
The electronic structure of a uniformly and modulation-doped GaAs/Ga0.75Al0.25As superlattice has been investigated by a self-consistent field calculation within the effective mass approximation for three different doping concentrations. It has been found that the resonance state energies show a strong dependence on the doping level and the doping distribution type of the superlattice.
Dependence of n-cSi/MoOx Heterojunction Performance on cSi Doping Concentration
Nasser, Hisham; Kokbudak, Gamze; Mehmood, Haris; Turan, Raşit (Elsevier BV; 2017-04-05)
In this work, we demonstrate a strong correlation between crystalline silicon (cSi) base doping concentration and the performance of cSi/MoOx heterojunction solar cell by investigating the structure numerically based on Silvaco TCAD simulation tool and experimentally. The doping concentration of n-type cSi was scanned in the 1 x 10(15) - 2 x 10(16) cm(-3) range. Simulation results show that utilizing highly doped cSi wafer degrades the conversion efficiency of cSi/MoOx solar cell. Efficiency of 11.16% has b...
Dependence of the photoluminescence of Tl2InGaS4 layered crystal on temperature and excitation intensity
Hasanlı, Nızamı; Gurlu, O; Aydinli, A; Yilmaz, I (Elsevier BV, 1998-01-01)
The emission band spectra of Tl2InGaS4 layered crystals were investigated in the 10-120 K temperature range and in the 540-860 nm wavelength range using photoluminescence (PL). The peak energy position of the emission band is located at 1.754 eV (707 nm) at 10 K. The emission band has a half-width of 0.28 eV and an asymmetric Gaussian lineshape. The increase of the half-width of the emission band, the blue shift of the emission band peak energy and the quenching of the PL with increasing temperature is expl...
Dependence of plasmonic enhancement of photocurrent in a-Si:H on the position and thickness of SiNx spacer layers
Saleh, Zaki M.; Nasser, Hisham; Ozkol, Engin; Bek, Alpan; Turan, Raşit (2015-04-29)
Plasmonic interfaces integrated to the front, back and both surfaces of photovoltaic thin films show different degrees of enhancement of light trapping. Enhancements in the spectral dependence of photocurrent normalized to the power of excitation light are used as an indicator of enhanced light trapping. In a previous study, we obtained enhancement in the spectral range of 600-700 nm by integrating 100-nm Ag nanoparticles to the back surface of a-Si:H with a critical dependence on the SiNx spacer layer thic...
Citation Formats
M. M. Çodur and B. Çakmak, “Dependence of Modulation Responce on Laser Parameters in Hybrid Lasers,” presented at the 8th International Advanced Technologies Symposium, Elazığ, Turkey, 2017, Accessed: 00, 2021. [Online]. Available: